Topological Phase Transition-Induced Triaxial Vector Magnetoresistance in (Bi<sub>1-x</sub>In<sub>x</sub>)<sub>2</sub>Se<sub>3</sub> Nanodevices.
basic_science · Level V
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- Record sourced from PubMed, PMID 29294273.
- Also identified by DOI 10.1021/acsnano.7b08054.
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Abstract
We report the study of a triaxial vector magnetoresistance (MR) in nonmagnetic (Bi<sub>1-x</sub>In<sub>x</sub>)<sub>2</sub>Se<sub>3</sub> nanodevices at the composition of x = 0.08. We show a dumbbell-shaped in-plane negative MR up to room temperature as well as a large out-of-plane positive MR. MR at three directions is about in a -3%:-1%:225% ratio at 2 K. Through both the thickness and composition-dependent magnetotransport measurements, we show that the in-plane negative MR is due to the topological phase transition enhanced intersurface coupling near the topological critical point. Our devices suggest the great potential for room-temperature spintronic applications in, for example, vector magnetic sensors.