A General Method for the Chemical Synthesis of Large-Scale, Seamless Transition Metal Dichalcogenide Electronics.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 29334150.
- Also identified by DOI 10.1002/adma.201706215.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The capability to directly build atomically thin transition metal dichalcogenide (TMD) devices by chemical synthesis offers important opportunities to achieve large-scale electronics and optoelectronics with seamless interfaces. Here, a general approach for the chemical synthesis of a variety of TMD (e.g., MoS<sub>2</sub> , WS<sub>2</sub> , and MoSe<sub>2</sub> ) device arrays over large areas is reported. During chemical vapor deposition, semiconducting TMD channels and metallic TMD/carbon nanotube (CNT) hybrid electrodes are simultaneously formed on CNT-patterned substrate, and then coalesce into seamless devices. Chemically synthesized TMD devices exhibit attractive electrical and mechanical properties. It is demonstrated that chemically synthesized MoS<sub>2</sub> -MoS<sub>2</sub> /CNT devices have Ohmic contacts between MoS<sub>2</sub> /CNT hybrid electrodes and MoS<sub>2</sub> channels. In addition, MoS<sub>2</sub> -MoS<sub>2</sub> /CNT devices show greatly enhanced mechanical stability and photoresponsivity compared with conventional gold-contacted devices, which makes them suitable for flexible optoelectronics. Accordingly, a highly flexible pixel array based on chemically synthesized MoS<sub>2</sub> -MoS<sub>2</sub> /CNT photodetectors is applied for image sensing.