Reversible and Precisely Controllable p/n-Type Doping of MoTe₂ Transistors through Electrothermal Doping.

Abstract

Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe₂ ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe₂ surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe₂ transistors. Because no dopant or special gas is used in the E-doping processes of MoTe₂ , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe₂ transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe₂ transistors undoubtedly has provided an approach to create the electronic devices with desired performance.