Effective Carrier-Concentration Tuning of SnO<sub>2</sub> Quantum Dot Electron-Selective Layers for High-Performance Planar Perovskite Solar Cells.
basic_science · Level V
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- Record sourced from PubMed, PMID 29484722.
- Also identified by DOI 10.1002/adma.201706023.
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Abstract
The carrier concentration of the electron-selective layer (ESL) and hole-selective layer can significantly affect the performance of organic-inorganic lead halide perovskite solar cells (PSCs). Herein, a facile yet effective two-step method, i.e., room-temperature colloidal synthesis and low-temperature removal of additive (thiourea), to control the carrier concentration of SnO<sub>2</sub> quantum dot (QD) ESLs to achieve high-performance PSCs is developed. By optimizing the electron density of SnO<sub>2</sub> QD ESLs, a champion stabilized power output of 20.32% for the planar PSCs using triple cation perovskite absorber and 19.73% for those using CH<sub>3</sub> NH<sub>3</sub> PbI<sub>3</sub> absorber is achieved. The superior uniformity of low-temperature processed SnO<sub>2</sub> QD ESLs also enables the fabrication of ≈19% efficiency PSCs with an aperture area of 1.0 cm<sup>2</sup> and 16.97% efficiency flexible device. The results demonstrate the promise of carrier-concentration-controlled SnO<sub>2</sub> QD ESLs for fabricating stable, efficient, reproducible, large-scale, and flexible planar PSCs.