Strain-induced high-temperature perovskite ferromagnetic insulator.
basic_science · Level V
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- Record sourced from PubMed, PMID 29507211.
- Also identified by DOI 10.1073/pnas.1707817115 and PMC identifier 5866535.
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Abstract
Ferromagnetic insulators are required for many new magnetic devices, such as dissipationless quantum-spintronic devices, magnetic tunneling junctions, etc. Ferromagnetic insulators with a high Curie temperature and a high-symmetry structure are critical integration with common single-crystalline oxide films or substrates. So far, the commonly used ferromagnetic insulators mostly possess low-symmetry structures associated with a poor growth quality and widespread properties. The few known high-symmetry materials either have extremely low Curie temperatures (≤16 K), or require chemical doping of an otherwise antiferromagnetic matrix. Here we present compelling evidence that the LaCoO<sub>3</sub> single-crystalline thin film under tensile strain is a rare undoped perovskite ferromagnetic insulator with a remarkably high <i>T</i><sub>C</sub> of up to 90 K. Both experiments and first-principles calculations demonstrate tensile-strain-induced ferromagnetism which does not exist in bulk LaCoO<sub>3</sub> The ferromagnetism is strongest within a nearly stoichiometric structure, disappearing when the Co<sup>2+</sup> defect concentration reaches about 10%. Significant impact of the research includes demonstration of a strain-induced high-temperature ferromagnetic insulator, successful elevation of the transition over the liquid-nitrogen temperature, and high potential for integration into large-area device fabrication processes.