Two-component anomalous Hall effect in a magnetically doped topological insulator.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 29599425.
- Also identified by DOI 10.1038/s41467-018-03684-0 and PMC identifier 5876350.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The anomalous Hall (AH) effect measurement has emerged as a powerful tool to gain deep insights into magnetic materials, such as ferromagnetic metals, magnetic semiconductors, and magnetic topological insulators (TIs). In Mn-doped Bi<sub>2</sub>Se<sub>3</sub>, however, the AH effect has never been reported despite a lot of previous studies. Here we report the observation of AH effect in (Bi,Mn)<sub>2</sub>Se<sub>3</sub> thin films and show that the sign of AH resistances changes from positive to negative as the Mn concentration is increased. The positive and negative AH resistances are found to coexist in a crossover regime. Such a two-component AH effect and the sign reversal can also be obtained by electrical gating of lightly doped samples. Our results provide an important basis for understanding the puzzling interplay between the surface states, the bulk states, and various magnetic doping effects, as well as competing magnetic orders in magnetically doped TIs.