Ultrathin Bismuth Film on 1T-TaS<sub>2</sub>: Structural Transition and Charge-Density-Wave Proximity Effect.
basic_science · Level V
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- Record sourced from PubMed, PMID 29701062.
- Also identified by DOI 10.1021/acs.nanolett.8b01003.
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Abstract
We have fabricated bismuth (Bi) ultrathin films on a charge-density-wave (CDW) compound 1T-TaS<sub>2</sub> and elucidated electronic states by angle-resolved photoemission spectroscopy and first-principles band-structure calculations. We found that the Bi film on 1T-TaS<sub>2</sub> undergoes a structural transition from (111) to (110) upon reducing the film thickness, accompanied by a drastic change in the energy band structure. We also revealed that while two-bilayer-thick Bi(110) film on Si(111) is characterized by a dispersive band touching the Fermi level ( E<sub>F</sub>), the energy band of the same film on 1T-TaS<sub>2</sub> exhibits holelike dispersion with a finite energy gap at E<sub>F</sub>. We discuss the origin of such intriguing differences in terms of the CDW proximity effect.