High Electron Mobility and Insights into Temperature-Dependent Scattering Mechanisms in InAsSb Nanowires.
basic_science · Level V
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- Record sourced from PubMed, PMID 29717874.
- Also identified by DOI 10.1021/acs.nanolett.8b00842.
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Abstract
InAsSb nanowires are promising elements for thermoelectric devices, infrared photodetectors, high-speed transistors, as well as thermophotovoltaic cells. By changing the Sb alloy fraction the mid-infrared bandgap energy and thermal conductivity may be tuned for specific device applications. Using both terahertz and Raman noncontact probes, we show that Sb alloying increases the electron mobility in the nanowires by over a factor of 3 from InAs to InAs<sub>0.65</sub>Sb<sub>0.35</sub>. We also extract the temperature-dependent electron mobility via both terahertz and Raman spectroscopy, and we report the highest electron mobilities for InAs<sub>0.65</sub>Sb<sub>0.35</sub> nanowires to date, exceeding 16,000 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> at 10 K.