Low-Temperature Solution-Processed ZnSe Electron Transport Layer for Efficient Planar Perovskite Solar Cells with Negligible Hysteresis and Improved Photostability.
basic_science · Level V
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- Record sourced from PubMed, PMID 29741863.
- Also identified by DOI 10.1021/acsnano.8b01351.
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Abstract
For a typical perovskite solar cell (PKSC), the electron transport layer (ETL) has a great effect on device performance and stability. Herein, we manifest that low-temperature solution-processed ZnSe can be used as a potential ETL for PKSCs. Our optimized device with ZnSe ETL has achieved a high power conversion efficiency (PCE) of 17.78% with negligible hysteresis, compared with the TiO<sub>2</sub> based cell (13.76%). This enhanced photovoltaic performance is attributed to the suitable band alignment, high electron mobility, and reduced charge accumulation at the interface of ETL/perovskite. Encouraging results were obtained when the thin layer of ZnSe cooperated with TiO<sub>2</sub>. It shows that the device based on the TiO<sub>2</sub>/ZnSe ETL with cascade conduction band level can effectively reduce the interfacial charge recombination and promote carrier transfer with the champion PCE of 18.57%. In addition, the ZnSe-based device exhibits a better photostability than the control device due to the greater ultraviolet (UV) light harvesting of the ZnSe layer, which can efficiently prevent the perovskite film from intense UV-light exposure to avoid associated degradation. Consequently, our results present that a promising ETL can be a potential candidate of the n-type ETL for commercialization of efficient and photostable PKSCs.