Precise Patterning of Laterally Stacked Organic Microbelt Heterojunction Arrays by Surface-Energy-Controlled Stepwise Crystallization for Ambipolar Organic Field-Effect Transistors.

Abstract

Ambipolar organic field-effect transistors (OFETs) combining single-crystalline p- and n-type organic micro/nanocrystals have demonstrated superior performance to their amorphous or polycrystalline thin-film counterparts. However, large-area alignment and precise patterning of organic micro/nanocrystals for ambipolar OFETs remain challenges. Here, a surface-energy-controlled stepwise crystallization (SECSC) method is reported for large-scale, aligned, and precise patterning of single-crystalline laterally stacked p-n heterojunction microbelt (MB) arrays. In this method, the p- and n-type organic crystals are precipitated via a stepwise process: first, the lateral sides of prepatterned photoresist stripes provide high-surface-energy sites to guide the aligned growth of p-type organic crystals. Next, the formed p-type crystals serve as new high-surface-energy positions to induce the crystallization of n-type organic molecules at their sides, thus leading to the formation of laterally stacked p-n microbelts. Ambipolar OFETs based on the p-n heterojunction MB arrays exhibit balanced hole and electron mobilities of 0.32 and 0.43 cm² V^-1 s^-1 , respectively, enabling the fabrication of complementary-like inverters with large voltage gains. This work paves the way toward rational design and construction of single-crystalline organic p-n heterojunction arrays for high-performance organic, integrated circuits.