Controlled Growth of Large-Area Uniform Multilayer Hexagonal Boron Nitride as an Effective 2D Substrate.
basic_science · Level V
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- Record sourced from PubMed, PMID 29863847.
- Also identified by DOI 10.1021/acsnano.8b03055.
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Abstract
Multilayer hexagonal boron nitride (h-BN) is an ideal insulator for two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, because h-BN screens out influences from surroundings, allowing one to observe intrinsic physical properties of the 2D materials. However, the synthesis of large and uniform multilayer h-BN is still very challenging because it is difficult to control the segregation process of B and N atoms from metal catalysts during chemical vapor deposition (CVD) growth. Here, we demonstrate CVD growth of multilayer h-BN with high uniformity by using the Ni-Fe alloy film and borazine (B<sub>3</sub>H<sub>6</sub>N<sub>3</sub>) as catalyst and precursor, respectively. Combining Ni and Fe metals tunes the solubilities of B and N atoms and, at the same time, allows one to engineer the metal crystallinity, which stimulates the uniform segregation of multilayer h-BN. Furthermore, we demonstrate that triangular WS<sub>2</sub> grains grown on the h-BN show photoluminescence stronger than that grown on a bare SiO<sub>2</sub> substrate. The PL line width of WS<sub>2</sub>/h-BN (the minimum and mean widths are 24 and 43 meV, respectively) is much narrower than those of WS<sub>2</sub>/SiO<sub>2</sub> (44 and 67 meV), indicating the effectiveness of our CVD-grown multilayer h-BN as an insulating layer. Large-area, multilayer h-BN realized in this work will provide an excellent platform for developing practical applications of 2D materials.