Homojunction of Oxygen and Titanium Vacancies and its Interfacial n-p Effect.
basic_science · Level V
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- Record sourced from PubMed, PMID 29947064.
- Also identified by DOI 10.1002/adma.201802173.
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Abstract
The homojunction of oxygen/metal vacancies and its interfacial n-p effect on the physiochemical properties are rarely reported. Interfacial n-p homojunctions of TiO<sub>2</sub> are fabricated by directly decorating interfacial p-type titanium-defected TiO<sub>2</sub> around n-type oxygen-defected TiO<sub>2</sub> nanocrystals in amorphous-anatase homogeneous nanostructures. Experimental measurements and theoretical calculations on the cell lattice parameters show that the homojunction of oxygen and titanium vacancies changes the charge density of TiO<sub>2</sub> ; a strong EPR signal caused by oxygen vacancies and an unreported strong titanium vacancies signal of 2D <sup>1</sup> H TQ-SQ MAS NMR are present. Amorphous-anatase TiO<sub>2</sub> shows significant performance regarding the photogeneration current, photocatalysis, and energy storage, owing to interfacial n-type to p-type conductivity with high charge mobility and less structural confinement of amorphous clusters. A new "homojunction of oxygen and titanium vacancies" concept, characteristics, and mechanism are proposed at an atomic-/nanoscale to clarify the generation of oxygen vacancies and titanium vacancies as well as the interface electron transfer.