Zero-static power radio-frequency switches based on MoS<sub>2</sub> atomristors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 29955064.
- Also identified by DOI 10.1038/s41467-018-04934-x and PMC identifier 6023925.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Recently, non-volatile resistance switching or memristor (equivalently, atomristor in atomic layers) effect was discovered in transitional metal dichalcogenides (TMD) vertical devices. Owing to the monolayer-thin transport and high crystalline quality, ON-state resistances below 10 Ω are achievable, making MoS<sub>2</sub> atomristors suitable as energy-efficient radio-frequency (RF) switches. MoS<sub>2</sub> RF switches afford zero-hold voltage, hence, zero-static power dissipation, overcoming the limitation of transistor and mechanical switches. Furthermore, MoS<sub>2</sub> switches are fully electronic and can be integrated on arbitrary substrates unlike phase-change RF switches. High-frequency results reveal that a key figure of merit, the cutoff frequency (f<sub>c</sub>), is about 10 THz for sub-μm<sup>2</sup> switches with favorable scaling that can afford f<sub>c</sub> above 100 THz for nanoscale devices, exceeding the performance of contemporary switches that suffer from an area-invariant scaling. These results indicate a new electronic application of TMDs as non-volatile switches for communication platforms, including mobile systems, low-power internet-of-things, and THz beam steering.