Room-Temperature Solution-Synthesized p-Type Copper(I) Iodide Semiconductors for Transparent Thin-Film Transistors and Complementary Electronics.
basic_science · Level V
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- Record sourced from PubMed, PMID 29974529.
- Also identified by DOI 10.1002/adma.201802379.
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Abstract
Here, room-temperature solution-processed inorganic p-type copper iodide (CuI) thin-film transistors (TFTs) are reported for the first time. The spin-coated 5 nm thick CuI film has average hole mobility (µ<sub>FE</sub> ) of 0.44 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and on/off current ratio of 5 × 10<sup>2</sup> . Furthermore, µ<sub>FE</sub> increases to 1.93 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> and operating voltage significantly reduces from 60 to 5 V by using a high permittivity ZrO<sub>2</sub> dielectric layer replacing traditional SiO<sub>2</sub> . Transparent complementary inverters composed of p-type CuI and n-type indium gallium zinc oxide TFTs are demonstrated with clear inverting characteristics and voltage gain over 4. These outcomes provide effective approaches for solution-processed inorganic p-type semiconductor inks and related electronics.