Enhancing the Performance of the Half Tin and Half Lead Perovskite Solar Cells by Suppression of the Bulk and Interfacial Charge Recombination.
basic_science · Level V
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- Record sourced from PubMed, PMID 29991093.
- Also identified by DOI 10.1002/adma.201803703.
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Abstract
In this article it is investigated how the hole extraction layer (HEL) influence the charge recombination and performance in half tin and half lead (FASn<sub>0.5</sub> Pb<sub>0.5</sub> I<sub>3</sub> ) based solar cells (HPSCs). FASn<sub>0.5</sub> Pb<sub>0.5</sub> I<sub>3</sub> film grown on PEDOT:PSS displays a large number of pin-holes and open grain boundaries, resulting in a high defect density and shunts in the perovskite film causing significant bulk and interfacial charge recombination in the HPSCs. By contrast, FASn<sub>0.5</sub> Pb<sub>0.5</sub> I<sub>3</sub> films grown on PCP-Na, an anionic conjugated polymer, show compact and pin-hole free morphology over a large area, which effectively eliminates the shunts and trap states. Moreover, PCP-Na is characterized by a higher work function, which determines a favorable energy alignment at the anode interface, enhancing the charge extraction. Consequently, both the interfacial and bulk charge recombination in devices using PCP-Na HEL are considerably reduced giving rise to an overall improvement of all the device parameters. The HPSCs fabricated with this HEL display power conversion efficiency up to 16.27%, which is 40% higher than the efficiency of the control devices using PEDOT:PSS HEL (11.60%). Furthermore, PCP-Na as HEL offers superior performance in larger area devices compared to PEDOT:PSS.