One Million Percent Tunnel Magnetoresistance in a Magnetic van der Waals Heterostructure.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 30001134.
- Also identified by DOI 10.1021/acs.nanolett.8b01552.
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Abstract
We report the observation of a very large negative magnetoresistance effect in a van der Waals tunnel junction incorporating a thin magnetic semiconductor, CrI<sub>3</sub>, as the active layer. At constant voltage bias, current increases by nearly one million percent upon application of a 2 T field. The effect arises from a change between antiparallel to parallel alignment of spins across the different CrI<sub>3</sub> layers. Our results elucidate the nature of the magnetic state in ultrathin CrI<sub>3</sub> and present new opportunities for spintronics based on two-dimensional materials.