Room temperature in-plane ferroelectricity in van der Waals In<sub>2</sub>Se<sub>3</sub>.

Zheng, Changxi; Yu, Lei; Zhu, Lin; Collins, James L; Kim, Dohyung; Lou, Yaoding; Xu, Chao; Li, Meng et al. · Sci Adv · 2018

basic_science · Level V

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Abstract

Van der Waals (vdW) assembly of layered materials is a promising paradigm for creating electronic and optoelectronic devices with novel properties. Ferroelectricity in vdW layered materials could enable nonvolatile memory and low-power electronic and optoelectronic switches, but to date, few vdW ferroelectrics have been reported, and few in-plane vdW ferroelectrics are known. We report the discovery of in-plane ferroelectricity in a widely investigated vdW layered material, β'-In<sub>2</sub>Se<sub>3</sub>. The in-plane ferroelectricity is strongly tied to the formation of one-dimensional superstructures aligning along one of the threefold rotational symmetric directions of the hexagonal lattice in the <i>c</i> plane. Surprisingly, the superstructures and ferroelectricity are stable to 200°C in both bulk and thin exfoliated layers of In<sub>2</sub>Se<sub>3</sub>. Because of the in-plane nature of ferroelectricity, the domains exhibit a strong linear dichroism, enabling novel polarization-dependent optical properties.