Isotopic Heft on the B<sub>1 l</sub> Silent Mode in Ultra-Narrow Gallium Nitride Nanowires.

Rodríguez-Fernández, Carlos; Almokhtar, Mohammed; Ibarra-Hernández, Wilfredo; de Lima, Mauricio Morais; Romero, Aldo H; Asahi, Hajime; Cantarero, Andrés · Nano Lett · 2018

basic_science · Level V

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Abstract

Wurtzite semiconductor compounds have two silent modes, B<sub>1 l</sub> and B<sub>1 h</sub>. A silent mode is a vibrational mode that carries neither a dipole moment nor Raman polarizability. Thus, they are forbidden in both infrared reflectivity and Raman spectroscopy. Astonishingly, we detected the B<sub>1 l</sub> mode in high-quality, ultra-narrow GaN nanowires using resonant Raman scattering, although the B<sub>1 h</sub> was not observed, and there is no immediate explanation for this asymmetric finding. The Raman experiments were performed using several laser lines from 647 to 325 nm; the latter is a wavelength in which Raman becomes resonant. Actually, we observed the B<sub>1 l</sub> mode only in resonance, indicating that the appearance of this mode is related to Fröhlich electron-phonon interactions; i.e., a dipole moment emerging in the B<sub>1 l</sub> silent mode may not be present in the B<sub>1 h</sub> mode. To shed light onto the physical origin of these observations, we performed density functional theory calculations of the lattice dynamics in GaN. We performed a careful analysis of the different physical mechanisms that allow the forbidden mode to appear to explain the physics underlying the nonzero dipole moment in the B<sub>1 l</sub> mode, and the reason why this dipole moment is not present in the B<sub>1 h</sub> mode.