Two-dimensional multibit optoelectronic memory with broadband spectrum distinction.
basic_science · Level V
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- Record sourced from PubMed, PMID 30054482.
- Also identified by DOI 10.1038/s41467-018-05397-w and PMC identifier 6063921.
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Abstract
Optoelectronic memory plays a vital role in modern semiconductor industry. The fast emerging requirements for device miniaturization and structural flexibility have diverted research interest to two-dimensional thin layered materials. Here, we report a multibit nonvolatile optoelectronic memory based on a heterostructure of monolayer tungsten diselenide and few-layer hexagonal boron nitride. The tungsten diselenide/boron nitride memory exhibits a memory switching ratio approximately 1.1 × 10<sup>6</sup>, which ensures over 128 (7 bit) distinct storage states. The memory demonstrates robustness with retention time over 4.5 × 10<sup>4</sup> s. Moreover, the ability of broadband spectrum distinction enables its application in filter-free color image sensor. This concept is further validated through the realization of integrated tungsten diselenide/boron nitride pixel matrix which captured a specific image recording the three primary colors (red, green, and blue). The heterostructure architecture is also applicable to other two-dimensional materials, which is confirmed by the realization of black phosphorus/boron nitride optoelectronic memory.