Next-Generation Narrow-Band Green-Emitting RbLi(Li<sub>3</sub> SiO<sub>4</sub> )<sub>2</sub> :Eu<sup>2+</sup> Phosphor for Backlight Display Application.

Zhao, Ming; Liao, Hongxu; Ning, Lixin; Zhang, Qinyuan; Liu, Quanlin; Xia, Zhiguo · Adv Mater · 2018

basic_science · Level V

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Abstract

The discovery of high efficiency narrow-band green-emitting phosphors is a major challenge in backlighting light-emitting diodes (LEDs). Benefitting from highly condensed and rigid framework structure of UCr<sub>4</sub> C<sub>4</sub> -type compounds, a next-generation narrow green emitter, RbLi(Li<sub>3</sub> SiO<sub>4</sub> )<sub>2</sub> :Eu<sup>2+</sup> (RLSO:Eu<sup>2+</sup> ), has emerged in the oxide-based family with superior luminescence properties. RLSO:Eu<sup>2+</sup> phosphor can be efficiently excited by GaN-based blue LEDs, and shows green emission at 530 nm with a narrow full width at half maximum of 42 nm, and very low thermal quenching (103%@150 °C of the integrated emission intensity at 20 °C), however its chemical stability needs to be improved later. The white LED backlight using optimized RLSO:8%Eu<sup>2+</sup> phosphor demonstrates a high luminous efficacy of 97.28 lm W<sup>-1</sup> and a wide color gamut (107% National Television System Committee standard (NTSC) in Commission Internationale de L'Eclairage (CIE) 1931 color space), suggesting its great potential for industrial applications as liquid crystal display (LCD) backlighting.