The Rate of Charge Tunneling in EGaIn Junctions Is Not Sensitive to Halogen Substituents at the Self-Assembled Monolayer//Ga<sub>2</sub>O<sub>3</sub> Interface.
basic_science · Level V
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- Record sourced from PubMed, PMID 30226988.
- Also identified by DOI 10.1021/acsnano.8b05217.
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Abstract
This paper describes experiments that are designed to test the influence of terminal groups incorporating carbon-halogen bonds on the current density (by hole tunneling) across self-assembled monolayer (SAM)-based junctions of the form M<sup>TS</sup>/S(CH<sub>2</sub>)<sub>9</sub>NHCOCH <sub>n</sub>X<sub>3- n</sub>//Ga<sub>2</sub>O<sub>3</sub>/EGaIn (where M = Ag and Au and X = CH<sub>3</sub>, F, Cl, Br, I). Within the limits of statistical significance, these rates of tunneling are insensitive to the nature of the terminal group at the interface between the SAM and the Ga<sub>2</sub>O<sub>3</sub>. The results are relevant to the origin of an apparent inconsistency in the literature concerning the influence of halogen atoms at the SAM//electrode interface on the tunneling current density.