Twist angle-dependent conductivities across MoS<sub>2</sub>/graphene heterojunctions.
basic_science · Level V
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- Record sourced from PubMed, PMID 30287809.
- Also identified by DOI 10.1038/s41467-018-06555-w and PMC identifier 6172227.
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Abstract
Van der Waals heterostructures stacked from different two-dimensional materials offer a unique platform for addressing many fundamental physics and construction of advanced devices. Twist angle between the two individual layers plays a crucial role in tuning the heterostructure properties. Here we report the experimental investigation of the twist angle-dependent conductivities in MoS<sub>2</sub>/graphene van der Waals heterojunctions. We found that the vertical conductivity of the heterojunction can be tuned by ∼5 times under different twist configurations, and the highest/lowest conductivity occurs at a twist angle of 0°/30°. Density functional theory simulations suggest that this conductivity change originates from the transmission coefficient difference in the heterojunctions with different twist angles. Our work provides a guidance in using the MoS<sub>2</sub>/graphene heterojunction for electronics, especially on reducing the contact resistance in MoS<sub>2</sub> devices as well as other TMDCs devices contacted by graphene.