Ultrafast Spin-to-Charge Conversion at the Surface of Topological Insulator Thin Films.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 30370615.
- Also identified by DOI 10.1002/adma.201802356.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
Strong spin-orbit coupling, resulting in the formation of spin-momentum-locked surface states, endows topological insulators with superior spin-to-charge conversion characteristics, though the dynamics that govern it have remained elusive. Here, an all-optical method is presented, which enables unprecedented tracking of the ultrafast dynamics of spin-to-charge conversion in a prototypical topological insulator Bi<sub>2</sub> Se<sub>3</sub> /ferromagnetic Co heterostructure, down to the sub-picosecond timescale. Compared to pure Bi<sub>2</sub> Se<sub>3</sub> or Co, a giant terahertz emission is observed in the heterostructure that originates from spin-to-charge conversion, in which the topological surface states play a crucial role. A 0.12 ps timescale is identified that sets a technological speed limit of spin-to-charge conversion processes in topological insulators. In addition, it is shown that the spin-to-charge conversion efficiency is temperature independent in Bi<sub>2</sub> Se<sub>3</sub> as expected from the nature of the surface states, paving the way for designing next-generation high-speed optospintronic devices based on topological insulators at room temperature.