Antiferromagnet-Based Spintronic Functionality by Controlling Isospin Domains in a Layered Perovskite Iridate.
basic_science · Level V
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- Record sourced from PubMed, PMID 30370684.
- Also identified by DOI 10.1002/adma.201805564.
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Abstract
The novel electronic state of the canted antiferromagnetic (AFM) insulator strontium iridate (Sr<sub>2</sub> IrO<sub>4</sub> ) is well described by the spin-orbit-entangled isospin J<sub>eff</sub> = 1/2, but the role of isospin in transport phenomena remains poorly understood. In this study, antiferromagnet-based spintronic functionality is demonstrated by combining the unique characteristics of the isospin state in Sr<sub>2</sub> IrO<sub>4</sub> . Based on magnetic and transport measurements, a large and highly anisotropic magnetoresistance (AMR) is obtained by manipulating the AFM isospin domains. First-principles calculations suggest that electrons whose isospin directions are strongly coupled to the in-plane net magnetic moment encounter an isospin mismatch when moving across the AFM domain boundaries, which generates a high resistance state. By rotating a magnetic field that aligns in-plane net moments and removes domain boundaries, the macroscopically ordered isospins govern dynamic transport through the system, which leads to the extremely angle-sensitive AMR. As this work establishes a link between isospins and magnetotransport in strongly spin-orbit-coupled AFM Sr<sub>2</sub> IrO<sub>4</sub> , the peculiar AMR effect provides a beneficial foundation for fundamental and applied research on AFM spintronics.