Liquid-Alloy-Assisted Growth of 2D Ternary Ga₂ In₄ S₉ toward High-Performance UV Photodetection.

Abstract

2D ternary systems provide another degree of freedom of tuning physical properties through stoichiometry variation. However, the controllable growth of 2D ternary materials remains a huge challenge that hinders their practical applications. Here, for the first time, by using a gallium/indium liquid alloy as the precursor, the synthesis of high-quality 2D ternary Ga₂ In₄ S₉ flakes of only a few atomic layers thick (≈2.4 nm for the thinnest samples) through chemical vapor deposition is realized. Their UV-light-sensing applications are explored systematically. Photodetectors based on the Ga₂ In₄ S₉ flakes display outstanding UV detection ability (R _λ = 111.9 A W^-1 , external quantum efficiency = 3.85 × 10⁴ %, and D* = 2.25 × 10¹¹ Jones@360 nm) with a fast response speed (τ_ring ≈ 40 ms and τ_decay ≈ 50 ms). In addition, Ga₂ In₄ S₉ -based phototransistors exhibit a responsivity of ≈10⁴ A W^-1 @360 nm above the critical back-gate bias of ≈0 V. The use of the liquid alloy for synthesizing ultrathin 2D Ga₂ In₄ S₉ nanostructures may offer great opportunities for designing novel 2D optoelectronic materials to achieve optimal device performance.