Scalable high performance radio frequency electronics based on large domain bilayer MoS<sub>2</sub>.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 30429471.
- Also identified by DOI 10.1038/s41467-018-07135-8 and PMC identifier 6235828.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Atomically-thin layered molybdenum disulfide (MoS<sub>2</sub>) has attracted tremendous research attention for their potential applications in high performance DC and radio frequency electronics, especially for flexible electronics. Bilayer MoS<sub>2</sub> is expected to have higher electron mobility and higher density of states with higher performance compared with single layer MoS<sub>2</sub>. Here, we systematically investigate the synthesis of high quality bilayer MoS<sub>2</sub> by chemical vapor deposition on molten glass with increasing domain sizes up to 200 μm. High performance transistors with optimized high-κ dielectrics deliver ON-current of 427 μA μm<sup>-1</sup> at 300 K and a record high ON-current of 1.52 mA μm<sup>-1</sup> at 4.3 K. Moreover, radio frequency transistors are demonstrated with an extrinsic high cut-off frequency of 7.2 GHz and record high extrinsic maximum frequency of oscillation of 23 GHz, together with gigahertz MoS<sub>2</sub> mixers on flexible polyimide substrate, showing the great potential for future high performance DC and high-frequency electronics.