Single crystal hybrid perovskite field-effect transistors.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 30559392.
- Also identified by DOI 10.1038/s41467-018-07706-9 and PMC identifier 6297354.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The fields of photovoltaics, photodetection and light emission have seen tremendous activity in recent years with the advent of hybrid organic-inorganic perovskites. Yet, there have been far fewer reports of perovskite-based field-effect transistors. The lateral and interfacial transport requirements of transistors make them particularly vulnerable to surface contamination and defects rife in polycrystalline films and bulk single crystals. Here, we demonstrate a spatially-confined inverse temperature crystallization strategy which synthesizes micrometre-thin single crystals of methylammonium lead halide perovskites MAPbX<sub>3</sub> (X = Cl, Br, I) with sub-nanometer surface roughness and very low surface contamination. These benefit the integration of MAPbX<sub>3</sub> crystals into ambipolar transistors and yield record, room-temperature field-effect mobility up to 4.7 and 1.5 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> in p and n channel devices respectively, with 10<sup>4</sup> to 10<sup>5</sup> on-off ratio and low turn-on voltages. This work paves the way for integrating hybrid perovskite crystals into printed, flexible and transparent electronics.