Barrier Inhomogeneities in Atomic Contacts on WS₂.

Abstract

The down-scaling of electrical components requires a proper understanding of the physical mechanisms governing charge transport. Here, we have investigated atomic-scale contacts and their transport characteristics on WS₂ using conductive atomic force microscopy (c-AFM). We demonstrate that c-AFM can provide true atomic resolution, revealing atom vacancies, adatoms, and periodic modulations arising from electronic effects. Moreover, we find a lateral variation of the surface conductivity that arises from the lattice periodicity of WS₂. Three distinct sites are identified, i.e., atop, bridge, and hollow. The current transport across these atomic metal-semiconductor interfaces is understood by considering thermionic emission and Fowler-Nordheim tunnelling. Current modulations arising from point defects and the contact geometry promise a novel route for the direct control of atomic point contacts in diodes and devices.