Gate-Controlled Metal-Insulator Transition in TiS<sub>3</sub> Nanowire Field-Effect Transistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 30586504.
- Also identified by DOI 10.1021/acsnano.8b08260.
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Abstract
We explore the electrical characteristics of TiS<sub>3</sub> nanowire field-effect transistor (FETs), over the wide temperature range from 3 to 350 K. These nanomaterials have a quasi-one-dimensional (1D) crystal structure and exhibit a gate-controlled metal-insulator transition (MIT) in their transfer curves. Their room-temperature mobility is ∼20-30 cm<sup>2</sup>/(V s), 2 orders of magnitude smaller than predicted previously, a result that we explain quantitatively in terms of the influence of polar-optical phonon scattering in these materials. In the insulating state (<∼220 K), the transfer curves exhibit unusual mesoscopic fluctuations and a current suppression near zero bias that is common to charge-density wave (CDW) systems. The fluctuations have a nonmonotonic temperature dependence and wash out at a temperature close to that of the bulk MIT, suggesting they may be a feature of quantum interference in the CDW state. Overall, our results demonstrate that quasi-1D TiS<sub>3</sub> nanostructures represent a viable candidate for FET realization and that their functionality is influenced by complex phenomena.