Air-Stable CuInSe₂ Nanocrystal Transistors and Circuits via Post-Deposition Cation Exchange.

Abstract

Colloidal semiconductor nanocrystals (NCs) are a promising materials class for solution-processable, next-generation electronic devices. However, most high-performance devices and circuits have been achieved using NCs containing toxic elements, which may limit their further device development. We fabricate high mobility CuInSe₂ NC field-effect transistors (FETs) using a solution-based, post-deposition, sequential cation exchange process that starts with electronically coupled, thiocyanate (SCN)-capped CdSe NC thin films. First Cu⁺ is substituted for Cd²⁺ transforming CdSe NCs to Cu-rich Cu₂Se NC films. Next, Cu₂Se NC films are dipped into a Na₂Se solution to Se-enrich the NCs, thus compensating the Cu-rich surface, promoting fusion of the Cu₂Se NCs, and providing sites for subsequent In-dopants. The liquid-coordination-complex trioctylphosphine-indium chloride (TOP-InCl₃) is used as a source of In³⁺ to partially exchange and n-dope CuInSe₂ NC films. We demonstrate Al₂O₃-encapsulated, air-stable CuInSe₂ NC FETs with linear (saturation) electron mobilities of 8.2 ± 1.8 cm²/(V s) (10.5 ± 2.4 cm²/(V s)) and with current modulation of 10⁵, comparable to that for high-performance Cd-, Pb-, and As-based NC FETs. The CuInSe₂ NC FETs are used as building blocks of integrated inverters to demonstrate their promise for low-cost, low-toxicity NC circuits.