MoS<sub>2</sub>-Based Optoelectronic Gas Sensor with Sub-parts-per-billion Limit of NO<sub>2</sub> Gas Detection.
basic_science · Level V
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- Record sourced from PubMed, PMID 30785724.
- Also identified by DOI 10.1021/acsnano.8b08778.
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Abstract
Red light illumination with photon energy matching the direct band gap of chemical vapor deposition grown single-layer MoS<sub>2</sub> with Au metal electrodes was used to induce a photocurrent which was employed instead of dark current for NO<sub>2</sub> gas sensing. The resulting Au/MoS<sub>2</sub>/Au optoelectronic gas sensor showed a significant enhancement of the device sensitivity S toward ppb level of NO<sub>2</sub> gas exposure reaching S = 4.9%/ppb (4900%/ppm), where S is a slope of dependence of relative change of the sensor resistance on NO<sub>2</sub> concentration. Further optimization of the MoS<sub>2</sub>-based optoelectronic gas sensor by using graphene (Gr) with a work function lower than that of Au for the electrical contacts to the MoS<sub>2</sub> channel allowed an increase of photocurrent. The limit of detection of NO<sub>2</sub> gas at the level of 0.1 ppb was obtained for the MoS<sub>2</sub> channel with graphene electrodes coated by Au. This value was calculated using experimentally obtained sensitivity and noise values and exceeds the U.S. Environment Protection Agency requirement for NO<sub>2</sub> gas detection at ppb level.