Photoinduced Doping To Enable Tunable and High-Performance Anti-Ambipolar MoTe<sub>2</sub>/MoS<sub>2</sub> Heterotransistors.
basic_science · Level V
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- Record sourced from PubMed, PMID 30974935.
- Also identified by DOI 10.1021/acsnano.9b00201.
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Abstract
van der Waals (vdW) p-n heterojunctions formed by two-dimensional nanomaterials exhibit many physical properties and deliver functionalities to enable future electronic and optoelectronic devices. In this report, we demonstrate a tunable and high-performance anti-ambipolar transistor based on MoTe<sub>2</sub>/MoS<sub>2</sub> heterojunction through in situ photoinduced doping. The device demonstrates a high on/off ratio of 10<sup>5</sup> with a large on-state current of several micro-amps. The peak position of the drain-source current in the transfer curve can be adjusted through the doping level across a large dynamic range. In addition, we have fabricated a tunable multivalue inverter based on the heterojunction that demonstrates precise control over its output logic states and window of midlogic through source-drain bias adjustment. The heterojunction also exhibits excellent photodetection and photovoltaic performances. Dynamic and precise modulation of the anti-ambipolar transport properties may inspire functional devices and applications of two-dimensional nanomaterials and their heterostructures of various kinds.