Giant nonvolatile resistive switching in a Mott oxide and ferroelectric hybrid.
basic_science · Level V
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- Record sourced from PubMed, PMID 30975746.
- Also identified by DOI 10.1073/pnas.1822138116 and PMC identifier 6500152.
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Abstract
Controlling the electronic properties of oxides that feature a metal-insulator transition (MIT) is a key requirement for developing a new class of electronics often referred to as "Mottronics." A simple, controllable method to switch the MIT properties in real time is needed for practical applications. Here we report a giant, nonvolatile resistive switching (ΔR/R > 1,000%) and strong modulation of the MIT temperature (ΔT<sub>c</sub> > 30 K) in a voltage-actuated V<sub>2</sub>O<sub>3</sub>/PMN-PT [Pb(Mg,Nb)O<sub>3</sub>-PbTiO<sub>3</sub>] heterostructure. This resistive switching is an order of magnitude larger than ever encountered in any other similar systems. The control of the V<sub>2</sub>O<sub>3</sub> electronic properties is achieved using the transfer of switchable ferroelastic strain from the PMN-PT substrate into the epitaxially grown V<sub>2</sub>O<sub>3</sub> film. Strain can reversibly promote/hinder the structural phase transition in the V<sub>2</sub>O<sub>3</sub>, thus advancing/suppressing the associated MIT. The giant resistive switching and strong T<sub>c</sub> modulation could enable practical implementations of voltage-controlled Mott devices and provide a platform for exploring fundamental electronic properties of V<sub>2</sub>O<sub>3</sub>.