Exceptionally High, Strongly Temperature Dependent, Spin Hall Conductivity of SrRuO<sub>3</sub>.
basic_science · Level V
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- Record sourced from PubMed, PMID 31046294.
- Also identified by DOI 10.1021/acs.nanolett.9b00729.
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Abstract
Spin-orbit torques (SOT) in thin film heterostructures originate from strong spin-orbit interactions (SOI) that, in the bulk, generate a spin current due either to extrinsic spin-dependent, skew, or/and side-jump scattering or to intrinsic Berry curvature in the conduction bands. While most SOT studies have focused on materials with heavy metal components, the oxide perovskite SrRuO<sub>3</sub> has been predicted to have a pronounced Berry curvature. Through quantification of its spin current by the SOT exerted on an adjacent Co ferromagnetic layer, we determine that SrRuO<sub>3</sub> has a strongly temperature ( T)-dependent spin Hall conductivity σ <sub>SH</sub>, increasing with the electrical conductivity, consistent with expected behavior of the intrinsic effect in the "dirty metal" regime. σ <sub>SH</sub> is very high at low T, e.g., σ <sub>SH</sub> > (ℏ/2 e)3 × 10<sup>5</sup> Ω<sup>-1</sup> m<sup>-1</sup> at 60 K, and is largely unaffected by the SrRuO<sub>3</sub> ferromagnetic transition at T <sub>c</sub> ≈ 150 K, which agrees with a recent theoretical determination that the intrinsic spin Hall effect is magnetization independent. Below T <sub>c</sub> smaller nonstandard SOT components also develop associated with the magnetism of the oxide. Our results are consistent with the degree of RuO<sub>6</sub> octahedral tilt being correlated with the strength of the SOI in this complex oxide, as predicted by recent theoretical work on strontium iridate. These results establish SrRuO<sub>3</sub> as a very promising candidate material for implementing strong spintronics functionalities in oxide electronics.