Electrical suppression of all nonradiative recombination pathways in monolayer semiconductors.
basic_science · Level V
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- Record sourced from PubMed, PMID 31048488.
- Also identified by DOI 10.1126/science.aaw8053.
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Abstract
Defects in conventional semiconductors substantially lower the photoluminescence (PL) quantum yield (QY), a key metric of optoelectronic performance that directly dictates the maximum device efficiency. Two-dimensional transition-metal dichalcogenides (TMDCs), such as monolayer MoS<sub>2</sub>, often exhibit low PL QY for as-processed samples, which has typically been attributed to a large native defect density. We show that the PL QY of as-processed MoS<sub>2</sub> and WS<sub>2</sub> monolayers reaches near-unity when they are made intrinsic through electrostatic doping, without any chemical passivation. Surprisingly, neutral exciton recombination is entirely radiative even in the presence of a high native defect density. This finding enables TMDC monolayers for optoelectronic device applications as the stringent requirement of low defect density is eased.