Fast Electrochemical Storage Process in Sputtered Nb<sub>2</sub>O<sub>5</sub> Porous Thin Films.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 31067028.
- Also identified by DOI 10.1021/acsnano.9b01457.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
The formation of a thin film electrode exhibiting high capacity and high rate capabilities is challenging in the field of miniaturized electrochemical energy storage. Here, we present an elegant strategy to tune the morphology and the properties of sputtered porous Nb<sub>2</sub>O<sub>5</sub> thin films deposited on Si-based substrates via the magnetron sputtering deposition technique. Kinetic analysis of the redox reactions is studied to qualify the charge storage process, where we observe a non-diffusion-controlled mechanism within the porous niobium pentoxide thin film. To improve the surface capacity of the Nb<sub>2</sub>O<sub>5</sub> porous electrode, the thickness is progressively increased up to 0.94 μm, providing a surface capacity close to 60 μAh·cm<sup>-2</sup> at 1 mV·s<sup>-1</sup>. The fabrication of high energy density miniaturized power sources based on the optimized T-Nb<sub>2</sub>O<sub>5</sub> films could be achieved for Internet of Things applications requiring high rate capability.