H/F-Substitution-Induced Homochirality for Designing High-T<sub>c</sub> Molecular Perovskite Ferroelectrics.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 31155759.
- Also identified by DOI 10.1002/adma.201902163.
- No licence information is recorded for this record.
- Because redistribution is not established, this page shows the abstract only. Follow the links below for the full text.
Abstract
A ferroelectric with a high phase-transition temperature (T<sub>c</sub> ) is an indispensable condition for practical applications. Over the past decades, both strain engineering and the isotope effect have been found to effectively improve the T<sub>c</sub> within ferroelectric material systems. However, the former strategy seems to prefer working in inorganic ferroelectric thin films, while the latter is also limited to some certain systems, such as hydrogen-bonded ferroelectrics. It is noted that a mono-fluorinated molecule is geometrically very similar to its parent molecule and the substitution of H by an F atom can introduce a chiral center on the molecule to template or stabilize polar structures. Significantly, the barrier of rotation of the fluorinated organic molecules is raised, resulting in a remarkable increase in T<sub>c</sub> . Herein, by applying the molecular design strategy of H/F substitution to the organic-inorganic perovskite ferroelectric (pyrrolidinium)CdCl<sub>3</sub> with a low T<sub>c</sub> of 240 K, two high-T<sub>c</sub> chiral perovskite ferroelectrics, (R)- and (S)-3-F-(pyrrolidinium)CdCl<sub>3</sub> are successfully synthesized, for which the T<sub>c</sub> reaches 303 K. The significant enhancement of 63 K in T<sub>c</sub> extends the ferroelectric working temperature range to room temperature. This finding provides a new effective way to regulate the T<sub>c</sub> in ferroelectrics and to design high-T<sub>c</sub> molecular ferroelectrics.