Scaling growth rates for perovskite oxide virtual substrates on silicon.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 31165726.
- Also identified by DOI 10.1038/s41467-019-10273-2 and PMC identifier 6549169.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The availability of native substrates is a cornerstone in the development of microelectronic technologies relying on epitaxial films. If native substrates are not available, virtual substrates - crystalline buffer layers epitaxially grown on a structurally dissimilar substrate - offer a solution. Realizing commercially viable virtual substrates requires the growth of high-quality films at high growth rates for large-scale production. We report the stoichiometric growth of SrTiO<sub>3</sub> exceeding 600 nm hr<sup>-1</sup>. This tenfold increase in growth rate compared to SrTiO<sub>3</sub> grown on silicon by conventional methods is enabled by a self-regulated growth window accessible in hybrid molecular beam epitaxy. Overcoming the materials integration challenge for complex oxides on silicon using virtual substrates opens a path to develop new electronic devices in the More than Moore era and silicon integrated quantum computation hardware.