Transport gap in SmB<sub>6</sub> protected against disorder.
basic_science · Level V
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- Record sourced from PubMed, PMID 31182612.
- Also identified by DOI 10.1073/pnas.1901245116 and PMC identifier 6601007.
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Abstract
The inverted resistance method was used in this study to extend the bulk resistivity of [Formula: see text] to a regime where the surface conduction overwhelms the bulk. Remarkably, regardless of the large off-stoichiometric growth conditions (inducing disorder by samarium vacancies, boron interstitials, etc.), the bulk resistivity shows an intrinsic thermally activated behavior that changes ∼7-10 orders of magnitude, suggesting that [Formula: see text] is an ideal insulator that is immune to disorder.
Medical subject headings
- Boron Compounds
- Samarium