Record High-Proximity-Induced Anomalous Hall Effect in (Bi<sub><i>x</i></sub>Sb<sub>1-<i>x</i></sub>)<sub>2</sub>Te<sub>3</sub> Thin Film Grown on CrGeTe<sub>3</sub> Substrate.
basic_science · Level V
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- Record sourced from PubMed, PMID 31185718.
- Also identified by DOI 10.1021/acs.nanolett.9b01495.
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Abstract
Quantum anomalous Hall effect (QAHE) can only be realized at extremely low temperatures in magnetically doped topological insulators (TIs) due to limitations inherent with the doping process. In an effort to boost the quantization temperature of QAHE, the magnetic proximity effect in magnetic insulator/TI heterostructures has been extensively investigated. However, the observed anomalous Hall resistance has never been more than several ohms, presumably owing to the interfacial disorders caused by the structural and chemical mismatch. Here, we show that, by growing (Bi<sub><i>x</i></sub>Sb<sub>1-<i>x</i></sub>)<sub>2</sub>Te<sub>3</sub> (BST) thin films on structurally and chemically well-matched, ferromagnetic-insulating CrGeTe<sub>3</sub> (CGT) substrates, the proximity-induced anomalous Hall resistance can be enhanced by more than an order of magnitude. This sheds light on the importance of structural and chemical matches for magnetic insulator/TI proximity systems.