Strong Hot Carrier Effects in Single Nanowire Heterostructures.
basic_science · Level V
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- Record sourced from PubMed, PMID 31242390.
- Also identified by DOI 10.1021/acs.nanolett.9b01345.
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Abstract
We use transient Rayleigh scattering to study the thermalization of hot photoexcited carriers in single GaAs<sub>0.7</sub>Sb<sub>0.3</sub>/InP nanowire heterostructures. By comparing the energy loss rate in single core-only GaAs<sub>0.7</sub>Sb<sub>0.3</sub> nanowires which do not show substantial hot carrier effects with the core-shell nanowires, we show that the presence of an InP shell substantially suppresses the longitudinal optical phonon emission rate at low temperatures which then leads to strong hot carrier effects.