Plasmonic Transition Metal Carbide Electrodes for High-Performance InSe Photodetectors.
basic_science · Level V
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- Record sourced from PubMed, PMID 31310513.
- Also identified by DOI 10.1021/acsnano.9b01941.
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Abstract
We demonstrate the application of MXenes, metallic 2D materials of transition-metal carbides, as excellent electrode materials for photonic devices. In this study, we have fabricated an InSe-based photodetector with a Ti<sub>2</sub>CT<sub><i>x</i></sub> electrode. The photodetector with few-layer, atomically thin, Ti<sub>2</sub>CT<sub><i>x</i></sub> (MXene) electrodes shows the avalanche carrier multiplication effect, which leads to high device performance. To improve the performance of the InSe/Ti<sub>2</sub>CT<sub><i>x</i></sub> avalanche photodetector, we can pattern Ti<sub>2</sub>CT<sub><i>x</i></sub> into nanoribbon arrays (a plasmonic grating structure), which enhances light absorption of the photodetector. The plasmonic InSe/Ti<sub>2</sub>CT<sub><i>x</i></sub> avalanche photodetector exhibits low dark current (3 nA), high responsivity (1 × 10<sup>5</sup> AW<sup>-1</sup>), and high detectivity (7.3 × 10<sup>12</sup> Jones).