Synthesis and Optoelectronic Applications of a Stable <i>p-</i>Type 2D Material: α-MnS.
basic_science · Level V
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- Record sourced from PubMed, PMID 31424906.
- Also identified by DOI 10.1021/acsnano.9b04205.
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Abstract
α-MnS, as a nonlayered <i>p-</i>type material with a wide band gap of 2.7 eV, has been expected to supplement the scarcity of two-dimensional (2D) <i>p-</i>type semiconductors, which are desperately required for constructing atomically thin <i>p-n</i> junctions. However, the preparation and property investigation of 2D α-MnS has scarcely been reported so far. Herein, we report the controlled synthesis of ultrathin large-scale α-MnS single crystals down to 4.78 nm <i>via</i> a facile chemical vapor deposition (CVD) method. Importantly, top-gating field-effect transistors based on the as-synthesized α-MnS nanosheets show <i>p-</i>type transport behavior with an ultrahigh on/off ratio exceeding 10<sup>6</sup>, surpassing most reported <i>p-</i>type 2D materials. Meanwhile, α-MnS phototransistors exhibit an ultrahigh detectivity of 3.2 × 10<sup>14</sup> Jones, as well as an excellent photoresponsivity of 139 A/W and a fast response time of 12 ms. Besides, outstanding environmental stability and admirable flexibility have also been demonstrated in the as-synthesized α-MnS nanosheets. We believe that this work broadens the scope of the CVD synthesis strategy for various <i>p-</i>type 2D materials and demonstrates their significant application potentials in electronics and optoelectronics.