Robust trap effect in transition metal dichalcogenides for advanced multifunctional devices.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 31515481.
- Also identified by DOI 10.1038/s41467-019-12200-x and PMC identifier 6742650.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
Defects play a crucial role in determining electric transport properties of two-dimensional transition metal dichalcogenides. In particular, defect-induced deep traps have been demonstrated to possess the ability to capture carriers. However, due to their poor stability and controllability, most studies focus on eliminating this trap effect, and little consideration was devoted to the applications of their inherent capabilities on electronics. Here, we report the realization of robust trap effect, which can capture carriers and store them steadily, in two-dimensional MoS<sub>2x</sub>Se<sub>2(1-x)</sub> via synergistic effect of sulphur vacancies and isoelectronic selenium atoms. As a result, infrared detection with very high photoresponsivity (2.4 × 10<sup>5</sup> A W<sup>-1</sup>) and photoswitching ratio (~10<sup>8</sup>), as well as nonvolatile infrared memory with high program/erase ratio (~10<sup>8</sup>) and fast switching time, are achieved just based on an individual flake. This demonstration of defect engineering opens up an avenue for achieving high-performance infrared detector and memory.