Ultrasensitive MoS<sub>2</sub> photodetector by serial nano-bridge multi-heterojunction.
basic_science · Level V
Where this comes from
- Record sourced from PubMed, PMID 31619671.
- Also identified by DOI 10.1038/s41467-019-12592-w and PMC identifier 6796006.
- Licence recorded as CC BY.
- The licence permits redistribution, so the abstract is shown in full and the full text is available from the publisher.
Abstract
The recent reports of various photodetectors based on molybdenum disulfide (MoS<sub>2</sub>) field effect transistors showed that it was difficult to obtain optoelectronic performances in the broad detection range [visible-infrared (IR)] applicable to various fields. Here, by forming a mono-/multi-layer nano-bridge multi-heterojunction structure (more than > 300 junctions with 25 nm intervals) through the selective layer control of multi-layer MoS<sub>2</sub>, a photodetector with ultrasensitive optoelectronic performances in a broad spectral range (photoresponsivity of 2.67 × 10<sup>6</sup> A/W at λ = 520 nm and 1.65 × 10<sup>4</sup> A/W at λ = 1064 nm) superior to the previously reported MoS<sub>2</sub>-based photodetectors could be successfully fabricated. The nano-bridge multi-heterojunction is believed to be an important device technology that can be applied to broadband light sensing, highly sensitive fluorescence imaging, ultrasensitive biomedical diagnostics, and ultrafast optoelectronic integrated circuits through the formation of a nanoscale serial multi-heterojunction, just by adding a selective layer control process.