Direct Observation of Band Gap Renormalization in Layered Indium Selenide.
basic_science · Level V
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- Record sourced from PubMed, PMID 31644265.
- Also identified by DOI 10.1021/acsnano.9b07144.
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Abstract
Manipulation of intrinsic electronic structures by electron or hole doping in a controlled manner in van der Waals layered materials is the key to control their electrical and optical properties. Two-dimensional indium selenide (InSe) semiconductor has attracted attention due to its direct band gap and ultrahigh mobility as a promising material for optoelectronic devices. In this work, we manipulate the electronic structure of InSe by <i>in situ</i> surface electron doping and obtain a significant band gap renormalization of ∼120 meV directly observed by high-resolution angle resolved photoemission spectroscopy. This moderate doping level (carrier concentration of 8.1 × 10<sup>12</sup> cm<sup>-2</sup>) can be achieved by electrical gating in field effect transistors, demonstrating the potential to design of broad spectral response devices.