2D Ca<sub>3</sub> Sn<sub>2</sub> S<sub>7</sub> Chalcogenide Perovskite: A Graphene-Like Semiconductor with Direct Bandgap 0.5 eV and Ultrahigh Carrier Mobility 6.7 × 10<sup>4</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>.
basic_science · Level V
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- Record sourced from PubMed, PMID 31682038.
- Also identified by DOI 10.1002/adma.201905643.
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Abstract
Graphene, a star 2D material, has attracted much attention because of its unique properties including linear electronic dispersion, massless carriers, and ultrahigh carrier mobility (10<sup>4</sup> -10<sup>5</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> ). However, its zero bandgap greatly impedes its application in the semiconductor industry. Opening the zero bandgap has become an unresolved worldwide problem. Here, a novel and stable 2D Ruddlesden-Popper-type layered chalcogenide perovskite semiconductor Ca<sub>3</sub> Sn<sub>2</sub> S<sub>7</sub> is found based on first-principles GW calculations, which exhibits excellent electronic, optical, and transport properties, as well as soft and isotropic mechanical characteristics. Surprisingly, it has a graphene-like linear electronic dispersion, small carrier effective mass (0.04 m<sub>0</sub> ), ultrahigh room-temperature carrier mobility (6.7 × 10<sup>4</sup> cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup> ), Fermi velocity (3 × 10<sup>5</sup> m s<sup>-1</sup> ), and optical absorption coefficient (10<sup>5</sup> cm<sup>-1</sup> ). Particularly, it has a direct quasi-particle bandgap of 0.5 eV, which realizes the dream of opening the graphene bandgap in a new way. These results guarantee its application in infrared optoelectronic and high-speed electronic devices.