Separating Electrons and Donors in BaSnO<sub>3</sub> via Band Engineering.
basic_science · Level V
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- Record sourced from PubMed, PMID 31702928.
- Also identified by DOI 10.1021/acs.nanolett.9b03825.
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Abstract
Separating electrons from their source atoms in La-doped BaSnO<sub>3</sub>, the first perovskite oxide semiconductor to be discovered with high room-temperature electron mobility, remains a subject of great interest for achieving high-mobility electron gas in two dimensions. So far, the vast majority of work in perovskite oxides has focused on heterostructures involving SrTiO<sub>3</sub> as an active layer. Here we report the demonstration of modulation doping in BaSnO<sub>3</sub> as the high room-temperature mobility host without the use of SrTiO<sub>3</sub>. Significantly, we show the use of angle-resolved hard X-ray photoelectron spectroscopy (HAXPES) as a nondestructive approach to not only determine the location of electrons at the buried interface but also to quantify the width of electron distribution in BaSnO<sub>3</sub>. The transport results are in good agreement with the results of self-consistent solution to one-dimensional Poisson and Schrödinger equations. Finally, we discuss viable routes to engineer two-dimensional electron gas density through band-offset engineering.