Direct Electrohydrodynamic Patterning of High-Performance All Metal Oxide Thin-Film Electronics.
basic_science · Level V
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- Record sourced from PubMed, PMID 31793762.
- Also identified by DOI 10.1021/acsnano.9b05715.
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Abstract
In this paper, we propose a scalable approach toward all-printed high-performance metal oxide thin-film transistors (TFTs), using a high-resolution electrohydrodynamic (EHD) printing process. Direct EHD micropatterning of metal oxide TFTs is based on diverse precursor solutions to form semiconducting materials (In<sub>2</sub>O<sub>3</sub>, In-Ga-ZnO (IGZO)), conductive metal oxide (Sn-doped In<sub>2</sub>O<sub>3</sub> (ITO)), as well as aluminum oxide (Al<sub>2</sub>O<sub>3</sub>) gate dielectric at low temperatures. The fully printed TFT devices exhibit excellent electron transport characteristics (average electron mobilities of up to 117 cm<sup>2</sup> V<sup>-1</sup> s<sup>-1</sup>), negligible hysteresis, excellent uniformity, and stable operation at low-operating voltage. Furthermore, integrated logic gates such as NOT and NAND have been printed and demonstrated. All-printed logic with individual gating and symmetric input/output behavior, which is crucial for large-scale integration, is also demonstrated. The devices and fabrication process described in this paper enable high-performance and high-reliability transparent electronics.