Gapless van der Waals Heterostructures for Infrared Optoelectronic Devices.
basic_science · Level V
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- Record sourced from PubMed, PMID 31794184.
- Also identified by DOI 10.1021/acsnano.9b08375.
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Abstract
Mixed-dimensional van der Waals (vdW) heterostructures based on two-dimensional (2D) materials exhibit immense potential in infrared optoelectronic applications. However, the weak vdW coupling results in limiting performance of infrared optoelectronic device. Here, we exploit a gapless heterostructure that S dangling bonds of nonlayered PbS are connected to the bonding sites of MoS<sub>2</sub> (with factitious S vacancies) <i>via</i> strong orbital hybridization. The strong interface coupling leads to ultrahigh responsivity and photogain (<i>G</i>) exceeding 10<sup>5</sup>, and the detectivity (<i>D</i>*) is greater than 10<sup>14</sup> Jones. More importantly, the gapless heterostructure shows fast rise and decay times about 47 and 49 μs, respectively, which is 5 orders of magnitude faster than that of transferred vdW heterostructures. Furthermore, an ultrahigh photon-triggered on/off ratio of 1.6 × 10<sup>6</sup> is achieved, which is 4 orders of magnitude higher than that of transferred vdW heterostructures. This architecture can offer an effective approach for advanced infrared optoelectronic devices.